* -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 27 pF)
* 100% Avalanche Tested
G S
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These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.
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